Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

摘要: Abstract A modulated molecular beam technique, using mass spectrometric detection of desorbed species, had been applied to a study the kinetics Ga and As4 interactions on {100} GaAs surfaces. Time domain spectrometer signals were processed fourier transform techniques provide information surface lifetimes, sticking coefficients, desorption energies reaction orders. In temperature range 300–450 K is nondissociatively chemisorbed atoms from weakly bound precursor state, but above 450 there pairwise dissociation-recombination between molecules adsorbed adjacent lattice sites. At temperatures higher than 600 dependent adatom population formed by As2 surface. Thus it possible produce beams elements, below this compound does not form.