Growth of high‐purity GaAs layers by molecular beam epitaxy

摘要: High‐purity GaAs layers were grown by molecular beam epitaxy using carefully controlled procedures for source and substrate preparation as well the growth itself. The without intentional doping semi‐insulating with resistivities consistently greater than 106 Ω cm. doped Si in 1014 cm−3 range gave record Hall mobilities, highest value being 140 000 cm2/Vs at 55 K a net charge carrier concentration of 1×1014 cm−3. results suggest that use prolonged period or AsH3 is not necessary condition high‐purity growth.