作者: J. Ghatak , D. Kabiraj , P.V. Satyam
DOI: 10.1016/J.APSUSC.2009.08.063
关键词: High-resolution transmission electron microscopy 、 Ultra-high vacuum 、 Ion beam mixing 、 Electron beam physical vapor deposition 、 Materials science 、 Ion 、 Transmission electron microscopy 、 Fluence 、 Analytical chemistry 、 Thin film 、 Surfaces, Coatings and Films
摘要: Abstract We report on room temperature MeV Au ion induced modifications at the Co/Si interfaces. Nanometers size thin film of Co and Si were grown by ultra high vacuum (UHV) electron beam evaporation technique Si(1 1 1) surface irradiated 1.5 MeV Au2+ ions a fluence 5 × 1014 ions cm−2. High-resolution transmission microscopy (HRTEM) along with energy filter imaging has been employed to study formation Co–Si alloy interface. Formation such discussed in light ion-matter interaction nanometer scale regime.