Energy spike induced effects in MeV ion-irradiated nanoislands
作者： B. Satpati , D.K. Goswami , U.D. Vaishnav , T. Som , B.N. Dev
DOI: 10.1016/S0168-583X(03)01453-8
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摘要: Abstract Transmission electron microscopy (TEM), atomic force (AFM) and Rutherford backscattering spectrometry (RBS) have been used to study the modification of Au nanoislands, grown on silicon substrates under high vacuum condition by MeV self-ion irradiation. Upon irradiation with 1.5 Au2+ ions, interesting observations were found for nanoislands in comparison continuous films: (i) higher probability crater formation, (ii) larger sputtered particle size as well coverage (iii) enhanced sputtering yield. Crater formation has studied a function impact angle at fluence 1 × 1014 ions cm−2 we that is prominent angles (i.e. glancing geometry). AFM determine TEM particles craters RBS yield from nanoisland films.
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