Characterization of ion beam induced nanostructures
作者： J. Ghatak , B. Satpati , M. Umananda , D. Kabiraj , T. Som
DOI: 10.1016/J.NIMB.2005.11.147
关键词: Rutherford backscattering spectrometry 、 Crystalline silicon 、 Ion beam 、 High-resolution transmission electron microscopy 、 Silicon 、 Optoelectronics 、 Ion 、 Materials science 、 Analytical chemistry 、 Sputtering 、 Substrate (electronics)
摘要: Tailoring of nanostructures with energetic ion beams has become an active area research leading to the fundamental understanding ion-solid interactions at nanoscale regime and possible applications in near future. Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM) asymmetric X-ray Bragg-rocking curve experimental methods have been used characterize ion-induced effects nanostructures. The possibility surface sub-surface/interface alloying nano-scale regime, ion-beam induced embedding, crater formation, sputtering yield variations for systems isolated nanoislands, semi-continuous continuous films noble metals (Au, Ag) deposited on single crystalline silicon will be reviewed. MeV-ion changes specified Au-nanoislands substrate are tracked as a function fluence using ex situ TEM. Strain bulk due 1.5 MeV Au 2+ C beam irradiation is determined by HRTEM Bragg rocking methods. Preliminary results nanoislands Co discussed.
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