作者: Hsu-Sheng Tsai , Ching-Hung Hsiao , Chia-Wei Chen , Hao Ouyang , Jenq-Horng Liang
DOI: 10.1039/C6NR02274J
关键词: Silicene 、 X-ray photoelectron spectroscopy 、 Ion implantation 、 Materials science 、 Substrate (electronics) 、 Nanotechnology 、 Optoelectronics 、 Lonsdaleite
摘要: … for silicene device applications and as the Si source for the formation of multilayer silicene. In … with the B ion implantation for direct synthesis of multilayer silicene on a 4H-SiC substrate. …