Scalable graphene synthesised by plasma-assisted selective reaction on silicon carbide for device applications.

摘要: Graphene, a two-dimensional material with honeycomb arrays of carbon atoms, has shown outstanding physical properties that make it promising candidate for variety electronic applications. To date, several issues related to the synthesis and device fabrication need be overcome. Despite fact large-area graphene films synthesised by chemical vapour deposition (CVD) can grown relatively few defects, required transfer process creates wrinkles polymer residues greatly reduce its performance in Graphene on silicon carbide (SiC) mobility been successfully used develop ultra-high frequency transistors; however, this method is limited due use costly vacuum (UHV) equipment reach temperatures over 1500 °C. Here, we show simple novel approach synthesise SiC substrates reduces temperature requirements allows commonly semiconductor processing industry. In work, plasma treatment followed annealing order obtain large-scale from bulk SiC. After exposure N2 plasma, promotes reaction nitrogen ions Si simultaneous condensation C surface Eventually, uniform, large-scale, n-type film remarkable transport behaviour wafer achieved. Furthermore, field effect transistors (FETs) high carrier mobilities were also demonstrated study.