Understanding the STM images of epitaxial graphene on a reconstructed 6H-SiC(0001) surface: the role of tip-induced mechanical distortion of graphene.
作者： José A. Morán-Meza , Jacques Cousty , Christophe Lubin , François Thoyer
DOI: 10.1039/C5CP07571H
关键词:
摘要: Epitaxial graphene (EG) grown on an annealed 6H-SiC(0001) surface has been studied under ultra-high vacuum (UHV) conditions by using a combined dynamic-scanning tunneling microscope/frequency modulation-atomic force microscope (dynamic-STM/FM-AFM) platform based qPlus probe. STM and AFM images independently recorded present the same hexagonal lattice of bumps with 1.9 nm period, which agrees density functional theory (DFT) calculations experimental results previously reported, attributed to (6 × 6) quasi-cell associated reconstruction. However, topographic in maxima simultaneously mean-tunneling-current map do not overlap but appear be spaced typically about 1 along [11] direction quasi-cell. A similar shift is observed between position dynamic-STM those frequency map. The origin these shifts discussed terms electronic coupling variations local states (LDOS) EG LDOS buffer layer amplified mechanical distortions induced or tip. Therefore, constant current image reconstructed does reproduce its real topography corresponds measured modulations, depend variable tip-induced distortion within
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