Manufacture of cadmium mercury telluride
作者： Louise Qinetiq Limited Buckle , Janet Elizabeth Qinetiq Limited Hails , Andrew Qinetiq Limited Graham , John William Qinetiq Limited Cairns , David John Qinetiq Limited Hall
DOI:
关键词: Layer (electronics) 、 Optoelectronics 、 Metalorganic vapour phase epitaxy 、 Buffer (optical fiber) 、 Passivation 、 Substrate (electronics) 、 Molecular beam epitaxy 、 Cadmium 、 Metallurgy 、 Mercury telluride 、 Materials science
摘要: A method of manufacture cadmium mercury telluride (CMT) is disclosed. The involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least layer telluride, Hg1-XCdXTe where x between (0) and (1) inclusive, grown metal organic vapour phase (MOVPE) use MBE to grow allows range substrates be used for CMT growth. provide the correct orientation later MOVPE growth also prevent chemical contamination attack during MOVPE. device processing performed with further crystalline and/or passivation layers. invention relates new devices formed method.
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