Apparatus for growing group II-VI mixed compound semiconductor

摘要: A method or growing a mixed compound semiconductor layer comprises the following steps of: providing reaction chamber comprising rotatable substrate stage, plurality of nozzles aligned in line, nozzle being arranged vertical to surface, and mechanism for moving stage at least alignment direction parallel surface; disposing on which is rotated around its axis; flowing source gas into through nozzles, thereby flow rate most reactive each controlled increase depending distance between center axis rotation nozzle; heating substrate. An apparatus applying above particular feature stage.