Reverse Monte Carlo simulation: the structure of amorphous silicon

作者: László Pusztai , Sándor Kugler

DOI: 10.1016/0022-3093(93)90513-W

关键词: Monte Carlo methodStatistical physicsMonte Carlo molecular modelingAmorphous siliconStructure factorReverse Monte CarloMolecular geometryDynamic Monte Carlo methodTetrahedronChemistry

摘要: Abstract Using the structure factor obtained experimentaly three dimensional large scale models were constructed by Reverse Monte Carlo simulation for determination of atomic a-Si. It is shown that several possessing different cosine distributions bond angles are consistent with experimental data. All these models, however, contain tetrahedral angle as a main feature, only exclusiveness it varies.

参考文章(7)
László Pusztai, Gergely Tóth, On the uniqueness of the Reverse Monte Carlo simulation. I. Simple liquids, partial radial distribution functions Journal of Chemical Physics. ,vol. 94, pp. 3042- 3049 ,(1991) , 10.1063/1.459827
R. L. McGreevy, L. Pusztai, Reverse Monte Carlo Simulation: A New Technique for the Determination of Disordered Structures Molecular Simulation. ,vol. 1, pp. 359- 367 ,(1988) , 10.1080/08927028808080958
J M Holender, G J Morgan, Molecular dynamics simulations of a large structure of amorphous Si and direct calculations of the structure factor Journal of Physics: Condensed Matter. ,vol. 3, pp. 1947- 1952 ,(1991) , 10.1088/0953-8984/3/12/025
S. Kugler, G. Molnár, G. Petö, E. Zsoldos, L. Rosta, A. Menelle, R. Bellissent, Neutron-diffraction study of the structure of evaporated pure amorphous silicon Physical Review B. ,vol. 40, pp. 8030- 8032 ,(1989) , 10.1103/PHYSREVB.40.8030
J. Blétry, Sphere and distance models for binary disordered systems Philosophical Magazine Part B. ,vol. 62, pp. 469- 508 ,(1990) , 10.1080/13642819008215248