Study of the stability of hydrogenated amorphous silicon using tight-binding molecular dynamics

作者: Runyu Yang , Jai Singh

DOI: 10.1016/S0022-3093(98)00713-3

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摘要: We have developed a tight-binding molecular dynamics (TBMD) approach for simulating the Si-H bonds in hydrogenated amorphous silicon (a-Si:H) systems. Using our approach, it has been possible to generate structure models of a-Si:H with different hydrogen concentrations. The calculated radial distribution function (RDF) agree experimental results. also total average energy per atom and found be minimum when concentration is range 8-14%. This implies that are most stable this range, which agrees very well

参考文章(12)
P. J. Zanzucchi, C. R. Wronski, D. E. Carlson, Optical and photoconductive properties of discharge‐produced amorphous silicon Journal of Applied Physics. ,vol. 48, pp. 5227- 5236 ,(1977) , 10.1063/1.323553
D. L. Staebler, C. R. Wronski, Reversible conductivity changes in discharge‐produced amorphous Si Applied Physics Letters. ,vol. 31, pp. 292- 294 ,(1977) , 10.1063/1.89674
W. D. Luedtke, Uzi Landman, Preparation, structure, dynamics, and energetics of amorphous silicon: A molecular-dynamics study. Physical Review B. ,vol. 40, pp. 1164- 1174 ,(1989) , 10.1103/PHYSREVB.40.1164
László Pusztai, Sándor Kugler, Reverse Monte Carlo simulation: the structure of amorphous silicon Journal of Non-crystalline Solids. pp. 147- 150 ,(1993) , 10.1016/0022-3093(93)90513-W
I Kwon, R Biswas, CZ Wang, KM Ho, CM Soukoulis, None, Transferable tight-binding models for silicon. Physical Review B. ,vol. 49, pp. 7242- 7250 ,(1994) , 10.1103/PHYSREVB.49.7242
Bernd Schröder, Thin film technology based on hydrogenated amorphous silicon Materials Science and Engineering A-structural Materials Properties Microstructure and Processing. ,vol. 139, pp. 319- 333 ,(1991) , 10.1016/0921-5093(91)90636-2
S. Kugler, L. Pusztai, L. Rosta, P. Chieux, R. Bellissent, Structure of evaporated pure amorphous silicon : neutron-diffraction and reverse Monte Carlo investigations Physical Review B. ,vol. 48, pp. 7685- 7688 ,(1993) , 10.1103/PHYSREVB.48.7685
Chris G. Van de Walle, Y. Bar-Yam, S. T. Pantelides, Theory of hydrogen diffusion and reactions in crystalline silicon. Physical Review Letters. ,vol. 60, pp. 2761- 2764 ,(1988) , 10.1103/PHYSREVLETT.60.2761
J M Holender, G J Morgan, Molecular dynamics simulations of a large structure of amorphous Si and direct calculations of the structure factor Journal of Physics: Condensed Matter. ,vol. 3, pp. 1947- 1952 ,(1991) , 10.1088/0953-8984/3/12/025