Relationship between x‐ray‐produced holes and interface states in metal‐oxide‐semiconductor capacitors
作者： Genda J. Hu , Walter C. Johnson
DOI: 10.1063/1.332169
关键词: Annihilation 、 X-ray 、 Irradiation 、 Capacitor 、 Metal 、 Oxide 、 Electron 、 Band gap 、 Physics 、 Atomic physics 、 General Physics and Astronomy
摘要: Metal‐silicon dioxide‐silicon capacitors were irradiated with soft x rays to 40 krads (SiO2) different biases (−3 +12 V) at 83 K. The number of interface states generated after samples warmed was found bear a linear relation the flatband voltage shift measured before warm up. A one‐to‐one relationship observed between in central 0.7‐eV portion Si band gap during one year storage room temperature and holes that moved Si–SiO2 Annihilation x‐ray‐generated by photoinjection electrons up prevented generation states. Both experiments support cause‐and‐effect oxide metal‐oxide semiconductor structure.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(20)
M. Kuhn, A quasi-static technique for MOS C-V and surface state measurements Solid-State Electronics. ,vol. 13, pp. 873- 885 ,(1970) , 10.1016/0038-1101(70)90073-0
K. H. Zaininger, ELECTRON BOMBARDMENT OF MOS CAPACITORS Applied Physics Letters. ,vol. 8, pp. 140- 142 ,(1966) , 10.1063/1.1754525
M. Pepper, Low energy electron irradiation of the Si-SiO2 interface Thin Solid Films. ,vol. 14, pp. S7- S10 ,(1972) , 10.1016/0040-6090(72)90382-3
H. L. Hughes, Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide Interface IEEE Transactions on Nuclear Science. ,vol. 16, pp. 195- 202 ,(1969) , 10.1109/TNS.1969.4325526
J. R. Szedon, J. E. Sandor, THE EFFECT OF LOW‐ENERGY ELECTRON IRRADIATION OF METAL‐OXIDE‐SEMICONDUCTOR STRUCTURES Applied Physics Letters. ,vol. 6, pp. 181- 182 ,(1965) , 10.1063/1.1754224
K. H. Zaininger, Irradiation of MIS Capacitors with High Energy Electrons IEEE Transactions on Nuclear Science. ,vol. 13, pp. 237- 247 ,(1966) , 10.1109/TNS.1996.4324367
Stella Pang, S. A. Lyon, Walter C. Johnson, Interface state generation in the Si‐SiO2system by photoinjecting electrons from an Al field plate Applied Physics Letters. ,vol. 40, pp. 709- 711 ,(1982) , 10.1063/1.93243
D. R. Collins, C. T. Sah, EFFECTS OF X‐RAY IRRADIATION ON THE CHARACTERISTICS OF METAL‐OXIDE‐SILICON STRUCTURES Applied Physics Letters. ,vol. 8, pp. 124- 126 ,(1966) , 10.1063/1.1754517
A. G. Revesz, Defect Structure and Irradiation Behavior of Noncrystalline SiO2 IEEE Transactions on Nuclear Science. ,vol. 18, pp. 113- 116 ,(1971) , 10.1109/TNS.1971.4326421
P. S. Winokur, J. M. McGarrity, H. E. Boesch, Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors IEEE Transactions on Nuclear Science. ,vol. 23, pp. 1580- 1585 ,(1976) , 10.1109/TNS.1976.4328543