Electrical properties of thin films

摘要: Stoichiometric thin films of were prepared by the thermal evaporation technique; as-deposited non-crystalline and crystallinity was built in on annealing at 423 K. The crystal structure as determined both x-ray electron diffraction showed that tetragonal phase obtained. Both dark electrical resistivity thermoelectric power (Seebeck coefficient S) measured for before after annealing. n-type conduction; existence two distinct activation energies belongs to types level: a shallow level deep levels deposited annealed film. also detected space charge limited current technique trap density is found be . obtained results are explained basis an energy diagram - proposed Garlick.