作者: A.M. Abdel Haleem , M. Ichimura
DOI: 10.1016/J.TSF.2008.03.009
关键词:
摘要: Abstract Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The conditions optimized on the basis of data obtained scanning electron microscope, Auger spectroscopy optical transmission measurements. Furthermore, photosensitivity was observed means photoelectrochemical measurements, which confirmed that indium showed n-type conduction. X-ray diffraction Raman studies revealed as-grown amorphous or nanocrystalline in nature became polycrystalline In2S3 after annealing.