作者: Yoshihide Kihara , Masanobu Honda , Tomoyuki Oishi , Toru Hisamatsu
DOI:
关键词: Etching (microfabrication) 、 Process (computing) 、 Object (computer science) 、 Control engineering 、 Oxygen gas 、 Process engineering 、 Chemistry
摘要: A method for processing a target object includes formation step of forming silicon oxide film in chamber by repeatedly executing sequence including first supplying gas containing aminosilane-based gas, second purging space the after step, third generating plasma oxygen and fourth step. The further preparation executed before is accommodated performing an etching process on object. performed In not generated.