Sequential and deep-level assisted tunnelling in multiple quantum well structures

作者: J Leo , B Movaghar

DOI: 10.1088/0268-1242/4/1/008

关键词: Wave functionQuantum tunnellingTunnel effectCondensed matter physicsInelastic scatteringMultiple quantumTunnel currentDeep levelElectrical resistivity and conductivityChemistry

摘要: A formalism is developed to investigate tunnelling across multiple quantum well structures or any system that comprised of a chain sites with tightly bound wavefunctions on each site. The flexible enough be used variable size, even if the inelastic scattering length shorter than sample. authors use it study effect deep levels located in barrier layers structure have transport. They find sharp resonances tunnel current and also reduction amount negative differential resistance voltage-current curves as temperature increased. This can applied Gamma -X transitions.

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