A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed
作者： Ming-Ming Fan , Ke-Wei Liu , Xing Chen , Zhen-Zhong Zhang , Bing-Hui Li
DOI: 10.1039/C6RA28736K
关键词: Ultraviolet 、 Optics 、 Materials science 、 Layer (electronics) 、 Electric field 、 Photodetector 、 Rise time 、 Electrode 、 Optoelectronics 、 Epitaxy 、 Responsivity
摘要: A self-powered solar-blind ultraviolet (UV) photodetector was realized on a Ag/ZnMgO/ZnO vertical structure. ZnO epitaxial layer employed to serve as both the buffer for growth of ZnMgO and bottom electrode device. Interestingly, device exhibited an obvious property owing built-in electric fields at Ag/ZnMgO ZnMgO/ZnO interfaces. At 0 V, peak responsivity 275 nm our 16 mA W−1, which is comparable that other UV photodetectors. Moreover, also very fast response speed (24 μs rise time 300 decay time) V. This study could provide much easier more feasible way develop photodetectors foreign substrates with high responsivity, speed, low cost.
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