Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film
作者： Meng Ding , Dongxu Zhao , Bin Yao , Zhipeng Li , Xijin Xu
DOI: 10.1039/C4RA11163J
关键词:
摘要: High quality ZnO microwires have been fabricated by chemical vapor deposition method. Ultraviolet photodetector based on heterojunction of n-ZnO (individual microwire)/p-GaN film was fabricated. The current–voltage characteristic the investigated, which showed that had rectifying behavior with rectification ratio (Iforward/Ireverse) about 6.3 × 102 at 4 V. photoresponse spectrum displayed a sharp cut-off wavelength 380 nm, and photoresponsivity as high 0.45 A W−1 0 V 1.3 2.5 reverse bias. ultraviolet-visible rejection (R370 nm/R450 nm) is three orders magnitude under zero
rsc.org
sci-hub.se 参考文章(31)
Ü Özgür, Ya I Alivov, Chunli Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, S-J Cho, H Morkoc, None, A comprehensive review of ZnO materials and devices Journal of Applied Physics. ,vol. 98, pp. 041301- ,(2005) , 10.1063/1.1992666
Fengyi Jiang, Jiangnan Dai, Li Wang, Wenqing Fang, Yong Pu, Qiming Wang, Zikang Tang, Photoluminescence of ZnO thin films grown on GaN templates by atmospheric pressure MOCVD Journal of Luminescence. ,vol. 122, pp. 162- 164 ,(2007) , 10.1016/J.JLUMIN.2006.01.070
Jun Dai, Chun Xiang Xu, Xiao Wei Sun, ZnO-microrod/p-GaN heterostructured whispering-gallery-mode microlaser diodes. Advanced Materials. ,vol. 23, pp. 4115- 4119 ,(2011) , 10.1002/ADMA.201102184
M. Razeghi, A. Rogalski, Semiconductor ultraviolet detectors Journal of Applied Physics. ,vol. 79, pp. 7433- 7473 ,(1996) , 10.1063/1.362677
Min-Chang Jeong, Byeong-Yun Oh, Moon-Ho Ham, Jae-Min Myoung, Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes Applied Physics Letters. ,vol. 88, pp. 202105- ,(2006) , 10.1063/1.2204655
A. Baltakesmez, S. Tekmen, P. Köç, S. Tüzemen, K. Meral, Y. Onganer, UV-visible detector and LED based n-ZnO/p-Si heterojunction formed by electrodeposition AIP Advances. ,vol. 3, pp. 032125- ,(2013) , 10.1063/1.4795737
Yunpeng Li, Xiangyang Ma, Lu Jin, Deren Yang, A chemical strategy to reinforce electrically pumped ultraviolet random lasing from ZnO films Journal of Materials Chemistry. ,vol. 22, pp. 16738- 16741 ,(2012) , 10.1039/C2JM33225F
D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, Hui Yang, X. Li, X. Y. Li, H. M. Gong, Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors Applied Physics Letters. ,vol. 90, pp. 062106- ,(2007) , 10.1063/1.2450658
K.W. Liu, J.G. Ma, J.Y. Zhang, Y.M. Lu, D.Y. Jiang, B.H. Li, D.X. Zhao, Z.Z. Zhang, B. Yao, D.Z. Shen, Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film Solid-state Electronics. ,vol. 51, pp. 757- 761 ,(2007) , 10.1016/J.SSE.2007.03.002
Julio A. Aranovich, Dolores Golmayo, Alan L. Fahrenbruch, Richard H. Bube, Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis Journal of Applied Physics. ,vol. 51, pp. 4260- 4268 ,(1978) , 10.1063/1.328243