PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE
作者： Seiji Sarayama , Hirokazu Iwata , Hisanori Yamane , Masahiko Shimada
DOI:
关键词: Crystallography 、 Flux (metallurgy) 、 Semiconductor device 、 Chemical engineering 、 Bulk crystal 、 Chemical reactor 、 Alkali metal 、 Substrate (electronics) 、 Materials science 、 Single crystal
摘要: A method of making a bulk crystal substrate GaN single includes the steps forming molten flux an alkali metal in reaction vessel and causing growth from flux, wherein is continued while replenishing compound containing N source outside vessel.
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