RF powered plasma enhanced chemical vapor deposition reactor and methods

摘要: Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, PECVD reactor (10) includes processing chamber (12) having first electrode (16) therewithin. A second (18) is disposed within configured for supporting at least one semiconductor workpiece processing. RF power source (26) delivers frequency to electrode. (32) Preferably frequencies different from another, even more preferably, greater than frequency. The thermocouple (28) which provides temperature information relative electrodes. According loop developed by grounded interiorly in manner reduces if not eliminates interference with other components including thermocouple.