Hopping conduction in partially compensated doped silicon.
作者： J. Zhang , W. Cui , M. Juda , D. McCammon , R. L. Kelley
关键词: Thermal conduction 、 Electrical resistivity and conductivity 、 Electrical resistance and conductance 、 Silicon 、 Physics 、 BORO 、 Atmospheric temperature range 、 Coulomb 、 Condensed matter physics 、 Doping
摘要: We have measured the dc electrical resistance of partially compensated (5\char21{}50 %) ion-implanted Si:P,B (both n and p type), over temperature range 0.05\char21{}30 K. The behavior is consistent with prediction model for variable-range hopping (VRH) a Coulomb gap \ensuremath{\rho}(T)=${\mathrm{\ensuremath{\rho}}}_{0}$exp(${\mathit{T}}_{0}$/T${)}^{1/2}$ 6.5${\mathit{T}}_{0}$/T24. observe deviations from this at our high- low-temperature extremes. In region, resistivities show stronger dependence than Coulomb-gap prediction. high-temperature deviation appears transition VRH to Mott VRH.
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