A Charge-to-Breakdown (Q BD ) Approach to SiC Gate Oxide Lifetime Extraction and Modeling
作者： P. Moens , J. Franchi , J. Lettens , L. De Schepper , M. Domeij
DOI: 10.1109/ISPSD46842.2020.9170097
关键词: Gate oxide 、 Distribution function 、 Trapping 、 Quantum tunnelling 、 Stress (mechanics) 、 Time-dependent gate oxide breakdown 、 Dielectric 、 Materials science 、 Charge (physics) 、 Molecular physics
摘要: This paper proposes a charge-to-breakdown (Q BD ) approach for SiC/SiO 2 dielectric lifetime extraction. The current through the dielectric is shown to be a combination of Fowler …
sci-hub.st 参考文章(6)
Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant Agarwal, John W. Palmour, High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers Applied Physics Letters. ,vol. 105, pp. 182107- ,(2014) , 10.1063/1.4901259
Victor Soler, Maria Cabello, Josep Montserrat, Jose Rebollo, Jose Millan, Philippe Godignon, Maxime Berthou, Enea Bianda, Andrei Mihaila, 4.5kV SiC MOSFET with boron doped gate dielectric 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). pp. 283- 286 ,(2016) , 10.1109/ISPSD.2016.7520833
Dethard Peters, Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Romain Esteve, Wolfgang Bergner, Daniel Kueck, Performance and ruggedness of 1200V SiC — Trench — MOSFET international symposium on power semiconductor devices and ic's. pp. 239- 242 ,(2017) , 10.23919/ISPSD.2017.7988904
Maria Cabello, Victor Soler, Gemma Rius, Josep Montserrat, José Rebollo, Philippe Godignon, Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review Materials Science in Semiconductor Processing. ,vol. 78, pp. 22- 31 ,(2017) , 10.1016/J.MSSP.2017.10.030
Stephan Wirths, Yulieth Christina Arango, Alyssa Prasmusinto, Giovanni Alfieri, Enea Bianda, Andrei Mihaila, Lukas Kranz, Marco Bellini, Lars Knoll, Vertical 1.2kV SiC Power MOSFETs with High-k/Metal Gate Stack international symposium on power semiconductor devices and ic s. ,(2019) , 10.1109/ISPSD.2019.8757601
M. Noguchi, T. Iwamatsu, H. Amishiro, H. Watanabe, K. Kita, N. Miura, Improvement in the Channel Performance and NBTI of SiC-MOSFETs by Oxygen Doping international electron devices meeting. ,(2019) , 10.1109/IEDM19573.2019.8993479