Vertical 1.2kV SiC Power MOSFETs with High-k/Metal Gate Stack
作者： Stephan Wirths , Yulieth Christina Arango , Alyssa Prasmusinto , Giovanni Alfieri , Enea Bianda
DOI: 10.1109/ISPSD.2019.8757601
关键词: Hysteresis 、 Gate stack 、 Wide-bandgap semiconductor 、 Threshold voltage 、 High-κ dielectric 、 Metal gate 、 Stack (abstract data type) 、 Optoelectronics 、 Power MOSFET 、 Materials science
摘要: … the same gate dielectric thickness as in a SiO2/poly-Si gate … /poly Si gate stack (cf Figure 1a) and a high-k/metal gate stack … N2O POA for the SiO2/poly Si gate stacks. Metallic contacts (…
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