Investigation of threshold voltage stability of SiC MOSFETs
作者： Dethard Peters , Thomas Aichinger , Thomas Basler , Gerald Rescher , Katja Puschkarsky
DOI: 10.1109/ISPSD.2018.8393597
关键词:
摘要: Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs) show excellent switching performance and reliability. However, compared to silicon devices the more complex properties of the semiconductor-dielectric interface imply some natural peculiarities in threshold voltage variation. This paper analyzes threshold voltage hysteresis effects, bias temperature instability effects (BTI) and their relevance for the switching behavior. Most of the effects can be understood by means of simple physical models and do …
sci-hub.se 参考文章(4)
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