Dr. Katja Puschkarsky; Dr. Katja Waschneck
机构: TU Wien, Infineon
每年引用次数
引用次数
引用: 843
H-指数: 15
I10-指数 : 21
出版物: 37
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation
T. Aichinger , G. Rescher , H. Reisinger , M. W. Feil
international reliability physics symposium 1 -7
11
2021
Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation
P Salmen , MW Feil , K Waschneck , H Reisinger
Microelectronics reliability 135 114575
1
2022
The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
Maximilian W. Feil , Andreas Huerner , Katja Puschkarsky , Christian Schleich
Crystals 10 ( 12) 1143
2020
Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation
Katja Puschkarsky , Hans Reisinger , Thomas Aichinger , Wolfgang Gustin
international integrated reliability workshop
25
2017
Relevance of off-state NBTI degradation in depletion HVNMOS transistor for power application
Marc Strasser , Roberta Stradiotto , Stefano Aresu , Katja Puschkarsky
international integrated reliability workshop
2018
Reliability and modeling: What to simulate and how?
Rui Zhang , Giovanni Verzellesi , Giuseppina Puzzilli , Katja Puschkarsky
international integrated reliability workshop
2
2017
Circuit relevant HCS lifetime assessments at single transistors with emulated variable loads
Christian Schlunder , F. Proebster , J. Berthold , Katja Puschkarsky
international reliability physics symposium
10
2017
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
Katja Puschkarsky , Tibor Grasser , Thomas Aichinger , Wolfgang Gustin
international reliability physics symposium 3
17
2018
Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
Katja Puschkarsky , Hans Reisinger , Thomas Aichinger , Wolfgang Gustin
IEEE Transactions on Device and Materials Reliability 18 ( 2) 144 -153
74
2018
Investigation of threshold voltage stability of SiC MOSFETs
Dethard Peters , Thomas Aichinger , Thomas Basler , Gerald Rescher
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 40 -43
63
2018
Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation
Katja Puschkarsky , Hans Reisinger , Christian Schlunder , Wolfgang Gustin
IEEE Transactions on Electron Devices 65 ( 11) 4764 -4771
6
2018
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental
Bianka Ullmann , Markus Jech , Katja Puschkarsky , Gunnar Andreas Rott
IEEE Transactions on Electron Devices 66 ( 1) 232 -240
30
2018
On the physical meaning of single-value activation energies for BTI in Si and SiC MOSFET devices
MW Feil , Katja Puschkarsky , W Gustin , H Reisinger
IEEE Transactions on Electron Devices 68 ( 1) 236 -243
11
2020
Matthew Hogan, Elnatan Mataev, Brad Bittel, Jeffrey Siddiqui, Mark Anders, Ryan Waskiewicz, In Hak Baick, Gad Haase (Middle row, left to right): Tom Kopley, Charles LaRow, Anisur Rahman, Dann Morillon, Chadwin Young, Rui Zhang, Kexin Yang, Woody Hu Yiqiang, Giovanni Verzelessi, Scott Pozder, Matt Ring, Avaya Jayanthinarasimham, Sheldon Tan, Aivars Lelis (Lower row, left to right): Giuseppina Puzzilli, Yuri Tkachev, Andries Scholten, Thibault Kempf, Greg Hunsinger, Dipankar
Milan Pešić Pramanik , Katja Puschkarsky , Marco A Villena , Luca Larcher
From Device Aging Physics to Automated Circuit Reliability Sign Off
Christian Schlunder , Katja Waschneck , Peter Rotter , Susanne Lachenmann
international reliability physics symposium 1 -12
1
2019
Physical modeling of charge trapping in 4H-SiC DMOSFET technologies
Christian Schleich , Dominic Waldhoer , Katja Waschneck , Maximilian W Feil
IEEE Transactions on Electron Devices 68 ( 8) 4016 -4021
18
2021
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs
Maximilian W Feil , Katja Waschneck , Hans Reisinger , Judith Berens
2023 IEEE International Reliability Physics Symposium (IRPS) 1 -10
11
2023
On the frequency dependence of the gate switching instability in silicon carbide MOSFETs
Maximilian Wolfgang Feil , Katja Waschneck , Hans Reisinger , Paul Salmen
Materials Science Forum 1092 109 -117
8
2023
Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental
Maximilian W Feil , Katja Waschneck , Hans Reisinger , Judith Berens
IEEE Transactions on Electron Devices
2
2024
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs
Tibor Grasser , M Feil , Katja Waschneck , Hans Reisinger
2024 IEEE International Reliability Physics Symposium (IRPS) 3B. 1 -3B. 1
1
2024