On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs
作者： Gerald Rescher , Gregor Pobegen , Thomas Aichinger , Tibor Grasser
DOI: 10.1109/IEDM.2016.7838392
关键词:
摘要: We study the subthreshold drain current hysteresis of 4H silicon carbide Si-face (0001) and a-face (1120) n-channel power MOSFETs between gate voltage sweeps from accumulation to inversion vice versa. Depending on direction sweep, show a different at same voltage. The observed up-sweep down-sweep can be expressed as shift may reach several volts. that is caused by hole capture in border traps during directly propotional charge pumping signal. fully recoverable applying bias above threshold does not impact device reliability.
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