Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs
作者： Liang Chun Yu , Jody Fronheiser , Vinayak Tilak , Kin P. Cheung
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.717-720.793
关键词:
摘要: The quality of the SiC/SiO2 interface is critical to stability and performance MOS-based SiC power devices. Charge pumping a flexible characterization technique. In this work, significant portion total traps are found be located in near-interface oxide using frequency-dependent charge pumping. Oxide trap tunneling mechanisms discussed, profile as function depth calculated. density shown increase exponentially it gets closer interface.
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