Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics
作者： Takuji Hosoi , Shuji Azumo , Yusaku Kashiwagi , Shigetoshi Hosaka , Ryota Nakamura
DOI: 10.1109/IEDM.2012.6478998
关键词: Power MOSFET 、 Materials science 、 Electronic engineering 、 Computer simulation 、 High-κ dielectric 、 Trench 、 Planar 、 Dielectric 、 Reliability (semiconductor) 、 Optoelectronics 、 Gate dielectric
摘要: We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization numerical simulation, thickness ratio layer to SiO 2 interlayer nitrogen content in film were carefully optimized enhance device performance reliability.
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