Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET
作者： Takuji Hosoi , Shuji Azumo , Yusaku Kashiwagi , Shigetoshi Hosaka , Kenji Yamamoto
DOI: 10.23919/ISPSD.2017.7988906
关键词: Power MOSFET 、 Relative permittivity 、 Tin 、 Metal gate 、 Transconductance 、 Reliability (semiconductor) 、 Optoelectronics 、 Electrical engineering 、 High-κ dielectric 、 Threshold voltage 、 Materials science
摘要: Advanced metal/high-k gate stack technology for SiC-based power MOSFET was demonstrated. We found that the Hf incorporation into aluminum oxynitride (HfAlON insulator) combined with TIN electrode effectively improves stability of threshold voltage under both negative and positive bias temperature stresses. Since relative permittivity HfAlON increases increasing content, peak transconductance enhancement up to 3.4 times acceptable reliability margin achieved in state-of-the-art trench by implementing TiN/HfA10N(Hf50%) stack.
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