Material science and device physics in SiC technology for high-voltage power devices

作者： Tsunenobu Kimoto

DOI: 10.7567/JJAP.54.040103

关键词: Semiconductor device 、 Power MOSFET 、 Engineering physics 、 Silicon carbide 、 Physics 、 Electronics 、 Transistor 、 Reliability (semiconductor) 、 Diode 、 Power semiconductor device

摘要: … Schottky barrier diodes (SBDs) and power metal–oxide–semiconductor field-effect … reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power …

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