INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL PROCESSING
作者： Hui-feng Li , Sima Dimitrijev , H. Barry Harrison , Denis Sweatman
DOI: 10.1063/1.118773
关键词: Conductance 、 Rapid thermal annealing 、 Annealing (metallurgy) 、 Materials science 、 Capacitor 、 State density 、 Rapid thermal processing 、 Nitriding 、 Composite material
摘要: Interfacial characteristics of Al/SiO2/n-type 6H–SiC metal–oxide–semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured a conductance technique at room temperature. RTP oxidation in pure O2 leads to an excellent SiO2/n-type interface the order 1010–1011 eV−1 cm−2. improves interface, while increases density.
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