Gate oxides on 4H-SiC substrates grown or annealed in N/sub 2/O/Ar mixture
作者： A. Perez-Tomas , P. Godignon , D. Tournier , N. Mestres , J. Millan
DOI: 10.1109/SMICND.2004.1403009
关键词:
摘要: N/sub 2/O directly grown gate oxides on 4H-SiC have been characterized using MOS capacitors, under several diluted 2/O/Ar furnace conditions. The effect of annealings standard thermal dry O/sub 2/ has also analysed comparing the channel mobility MOSFETs. measured MOSFET transfer characteristics are fitted a 2D device simulator (MEDICI), taking into account interfacial traps density within band-gap.
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