High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon
作者： Y. K. Sharma , F. Li , M. R. Jennings , C. A. Fisher , A. Pérez-Tomás
DOI: 10.1007/S11664-015-3949-4
关键词:
摘要: In a novel approach, high temperatures (1200–1400°C) were used to oxidize cubic silicon carbide (3C-SiC) grown on substrate. High-temperature oxidation does not significantly affect 3C-SiC doping concentration, structural composition, or the final morphology of SiO2 layer, which remains unaffected even at 1400°C (the melting point is 1414°C). Metal-oxide-semiconductor capacitors (MOS-C) and lateral channel metal-oxide-semiconductor field-effect-transistors (MOSFET) fabricated by use high-temperature process study 3C-SiC/SiO2 interfaces. Unlike 4H-SiC MOSFET, there no extra benefit increasing temperature from 1200°C 1400°C. All MOSFET resulted in maximum field-effect mobility approximately 70 cm2/V s.
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