Thermal oxidation of 3C silicon carbide single‐crystal layers on silicon
作者： C. D. Fung , J. J. Kopanski
DOI: 10.1063/1.95394
关键词:
摘要: … In terms of dielectric strength and fixed oxide charges, oxide films grown at high temperatures of 3C SiC have properties comparable to Si02 films grown on silicon. These data suggest …
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