Thermal oxidation of single-crystal silicon carbide - Kinetic, electrical, and chemical studies

摘要: This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H Sic in wet dry oxidizing ambients. Values linear parabolic rate constants were obtained, as well preliminary results activation energies constants. Examples are presented describing how thermal can be used to map polytypes characterize defects epitaxial layers grown on low tilt angle substrates. Interface widths measured using Auger electron spectroscopy (AES) with Ar ion beam depth profiling variable spectroscopic ellipsometry (VASE) effective medium approximation (EMA) models. Preliminary electrical measurements MOS capacitors also presented.