DEVELOPMENT AND OPERATION OF BURIED CHANNEL CHARGE COUPLED DEVICES IN 6H SILICON CARBIDE

摘要: Silicon carbide is a wide bandgap semiconductor that well suited for high power, temperature electronic devices due to its remarkable and thermal properties. Photosensitive in the 6H polytype of Sic have also been demonstrated, showing sensitivity ultraviolet wavelengths near 270 nm. Furthermore, native oxide on silicon dioxide, meaning SIC can be thermally oxidized form quality gate dielectric, making metal-oxide-semiconductor (MOS) possible. These qualities make ideal constructing UV sensitive CCD imagers. 'This work investigates feasibility developing imagers through fabrication demonstration buried channel linear shift array. Several elements MOS field effect family were studied. With careful surface preparation device processing techniques, SiC/silicondioxide interfaces ameliorated achieve state densities below 2e l1 per-centimeters-squared electron mobilities above 40 centimeters-squared-per-volt-second. Buried MOSFETs fabricated with ion implantation nitrogen at elevated temperatures functioned excess 180 centimeters-squared-pervolt-second, which shows an advantage using structure. Studies capacitance characteristics hold good agreement general one-dimensional depletion model. A double polysilicon level, overlapping process was adapted SiC/MOS system. four phase register built operated ,the pseudo-two configuration room temperature. Device clocking frequencies limited 30 kHz by slow charge readout but higher speeds estimated. In this frequency range, transfer efficiencies probably dominated carrier trapping bulk states, may present implantation. Recommendations improvement performance methods integrating photodetectors are given.