A feasibility study on SiC optoinjected CCD with buried channels
作者： Na Ye , Zhiming Chen , Longfei Xie
DOI: 10.1088/1674-4926/34/11/114014
关键词: Intensity (heat transfer) 、 Ultraviolet light 、 Voltage 、 Optics 、 Electron 、 Wavelength 、 Communication channel 、 Materials science 、 Sensitivity (electronics) 、 Optoelectronics 、 Computer simulation 、 Electrical and Electronic Engineering 、 Materials Chemistry 、 Electronic, Optical and Magnetic Materials 、 Condensed matter physics
摘要: An SiC optoinjected charge-coupled device with buried channels (BCCD) is designed for the detection of ultraviolet light (UV), and its feasibility studied by means Silvaco numerical simulation software. Charge storage transfer characteristics BCCD can be conformed results. The channel design a key point to realize high sensitivity device. mobility electrons in 6H-SiC changed from 47 200 cm2/(V.s) when replaced surface subsurface 0.2 μm. With optimized parameters, density stored reach up 1.062 × 1011 cm−2 number 1.826 108 UV wavelengths 380 nm an intensity 0.1 W/cm2 under driving voltage 15 V at room temperature.
harvard.edu
sci-hub.se 参考文章(12)
Yang Fu-Jia, Tang Jia-Yong, Yang Jian-Jun, Ge Qi-Yun, Ye Hui, Sun Chang-Nian, Weng Tai-Meng, Study of the polarisation mechanism of beam-foil interaction ions using the channeling effect Chinese Physics. ,vol. 6, pp. 1- 5 ,(1986)
Yuan-Shen Huang, Zheng-Ji Ni, Song-Lin Zhuang, Da-Wei Zhang, Xin Tian, [Preparation and spectral characterization of Lumogen coatings for UV-responsive CCD image sensors]. Spectroscopy and Spectral Analysis. ,vol. 30, pp. 1171- ,(2010)
Michael R. Melloch, Scott T. Sheppard, James A. Cooper Jr., DEVELOPMENT AND OPERATION OF BURIED CHANNEL CHARGE COUPLED DEVICES IN 6H SILICON CARBIDE ,(1996)
C. Codreanu, M. Avram, V. Obreja, C. Voitincu, I. Codreanu, Interface states and related surface currents in SiC junctions international semiconductor conference. ,vol. 2, pp. 297- 300 ,(2003) , 10.1109/SMICND.2003.1252439
S.T. Sheppard, M.R. Melloch, J.A. Cooper, Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide IEEE Electron Device Letters. ,vol. 17, pp. 4- 6 ,(1996) , 10.1109/55.475559
Zhi-zhong Xing, Casas–Ibarra parametrization and leptogenesis Chinese Physics C. ,vol. 34, pp. 1- 6 ,(2010) , 10.1088/1674-1137/34/1/001
Zhang You-Run, Zhang Bo, Li Zhao-Ji, Deng Xiao-Chuan, None, Two-dimensional analysis of the interface state effect on current gain for a 4H-SiC bipolar junction transistor Chinese Physics B. ,vol. 19, pp. 067102- ,(2010) , 10.1088/1674-1056/19/6/067102
W.A.R. Franks, M.J. Kiik, A. Nathan, UV-responsive CCD image sensors with enhanced inorganic phosphor coatings IEEE Transactions on Electron Devices. ,vol. 50, pp. 352- 358 ,(2003) , 10.1109/TED.2003.809029
M. Roschke, F. Schwierz, Electron mobility models for 4H, 6H, and 3C SiC [MESFETs] IEEE Transactions on Electron Devices. ,vol. 48, pp. 1442- 1447 ,(2001) , 10.1109/16.930664
M.M. Blouke, M.W. Cowens, J.E. Hall, J.A. Westphal, A.B. Christensen, A UV sensitive CCD detector 1979 International Electron Devices Meeting. pp. 141- 143 ,(1979) , 10.1109/IEDM.1979.189562