Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide
作者： Carl-Mikael Zetterling , Mikael Östling
DOI: 10.1557/PROC-339-209
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摘要: Monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient at 1523 K or without the addition of TCA (Trichloroethane), wet pyrogenic steam 1473 K. POCI3 doped polysilicon gates for electrical characterisation by capacitance-voltage measurements breakdown field measurements. Large flatband voltage shifts indicate fixed charges up 10 13 cm -2 . incorporation aluminum was monitored using SIMS (Secondary Ion Mass Spectrometry). Surprisingly high signals interpreted as evidence an aluminum-Oxygen compound having formed (ie Al 2 O 3 ).
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