Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
作者： Shigehiro Nishino , J. Anthony Powell , Herbert A. Will
DOI: 10.1063/1.93970
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摘要: … In order to prepare the Si substrate surface for subsequent growth, it is etched by heating to … The susceptor and Si wafer are again heated to 1400 DC. After waiting one minute for tem…
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