Method of growing a single crystalline β-SiC layer on a silicon substrate
作者： Fumitake Mieno , Takashi Eshita , Kikuo Itoh , Yuji Furumura
DOI:
关键词: Silicon 、 Chlorosilane 、 Layer (electronics) 、 Carbide 、 Substrate (electronics) 、 Analytical chemistry 、 Atmospheric temperature range 、 Crystalline silicon 、 Acetylene 、 Materials science
摘要: A single crystalline silicon carbide (β-SiC) layer having a thickness greater than 1 μm is grown on substrate by the following method of present invention. The provided in reactor chamber, and chamber evacuated maintained at reduced atmospheric pressure during growing processes. While flowing mixed gas containing acetylene into heated up temperature range from 800° to 1000° C., preferable 810° 850° whereby buffer carbonized 60 100 Å substrate. Thereafter, changed hydrocarbon chlorosilane, raised 950° C. In this process, β-SiC can be layer, few for expected.
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