Characterization of Al 2 O 3 /LaAlO 3 /SiO 2 Gate Stack on 4H-SiC After Post-Deposition Annealing
作者： Johnny K. O. Sin , Yong Liu , Yuichi Onozawa , Naoto Fujishima , Chao Xiao
关键词: Thermal stability 、 Annealing (metallurgy) 、 Gate dielectric 、 Gate oxide 、 Silicon carbide 、 Materials science 、 Dielectric 、 Deposition (law) 、 Analytical chemistry 、 Electric field
摘要: We fabricated Al2O3/LaAlO3/SiO2 (ALS) gate stacks on 4H-SiC, with LaAlO3 (LAO) film being annealed in O2 atmosphere. The ALS stack at 700 °C exhibits a much higher breakdown effective electric field ( ${E}_{\text {eff}}$ ), which is approximately 1.8 times than that of traditional SiO2 oxide. also yields low interface state density ${D}_{\text {it}}$ ) thanks to the intact LAO film. However, an annealing temperature as high 800 induced traps and deteriorated SiO2–SiC interface. °C-annealed dielectric constant $\kappa $ 14 trap density, coupled good electrical characteristics, makes it promising for SiC power metal-oxide-semiconductor (MOS) device applications.
sci-hub.st 参考文章(17)
Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto, Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance Journal of Applied Physics. ,vol. 111, pp. 014502- ,(2012) , 10.1063/1.3673572
Kuan Yew Cheong, Jeong Hyun Moon, Hyeong Joon Kim, Wook Bahng, Nam-Kyun Kim, Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide Applied Physics Letters. ,vol. 90, pp. 162113- ,(2007) , 10.1063/1.2730731
Martin Gutsche, Harald Seidl, Johann W. Bartha, Stefan Jakschik, Uwe Schroeder, Thomas Hecht, Crystallization behavior of thin ALD-Al2O3 films Thin Solid Films. ,vol. 425, pp. 216- 220 ,(2003) , 10.1016/S0040-6090(02)01262-2
Hironori Yoshioka, Takashi Nakamura, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura, Tsunenobu Kimoto, Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility Materials Science Forum. pp. 418- 423 ,(2014) , 10.4028/WWW.SCIENTIFIC.NET/MSF.778-780.418
T.T. Jia, X.H. Cheng, D. Chao, D.W. Xu, Z.J. Wang, C. Xia, Y.W. Zhang, Y.H. Yu, Properties of LaAlO3 thin film on GaAs(1 0 0) treated by in situ NH3 plasma Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 307, pp. 349- 352 ,(2013) , 10.1016/J.NIMB.2013.01.079
Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Ryota Nakamura, Shuhei Mitani, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe, Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics international electron devices meeting. ,(2012) , 10.1109/IEDM.2012.6478998
Byung-Eun Park, Hiroshi Ishiwara, Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition Applied Physics Letters. ,vol. 82, pp. 1197- 1199 ,(2003) , 10.1063/1.1556966
L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Holländer, J. Schubert, Measurement of the band offsets between amorphous LaAlO3 and silicon Applied Physics Letters. ,vol. 84, pp. 726- 728 ,(2004) , 10.1063/1.1644055
L. Miotti, K. P. Bastos, C. Driemeier, V. Edon, M. C. Hugon, B. Agius, I. J. R. Baumvol, Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si Applied Physics Letters. ,vol. 87, pp. 022901- ,(2005) , 10.1063/1.1989447
A. Rose, Space-Charge-Limited Currents in Solids Physical Review. ,vol. 97, pp. 1538- 1544 ,(1955) , 10.1103/PHYSREV.97.1538