Measurement of the band offsets between amorphous LaAlO3 and silicon
作者： L. F. Edge , D. G. Schlom , S. A. Chambers , E. Cicerrella , J. L. Freeouf
DOI: 10.1063/1.1644055
关键词:
摘要: The conduction and valence band offsets between amorphous LaAlO3 silicon have been determined from x-ray photoelectron spectroscopy measurements. These films, which are free of interfacial SiO2, were made by molecular-beam deposition. line-up is type I with measured 1.8±0.2 eV for electrons 3.2±0.1 holes. independent the doping concentration in substrate as well film thickness. films a bandgap 6.2±0.1 eV.
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