Energy-band alignments at LaAlO3 and Ge interfaces
作者： YY Mi , SJ Wang , JW Chai , JS Pan , ACH Huan
DOI: 10.1063/1.2387986
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摘要: The energy-band alignments for LaAlO3 films on p-Ge(001) with and without GeOxNy interfacial layer have been studied using photoemission spectroscopy. valence-band offsets at LaAlO3∕GeOxNy∕Ge LaAlO3∕Ge interfaces were measured to be 2.70 3.06eV, respectively. effect of the band is attributed modification interface dipoles. conduction-band LaAlO3∕Si(001) are found same value 2.25±0.05eV, where shift top accounts difference in alignment two interfaces.
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A. Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, M. Houssa, M. Caymax, HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition Applied Physics Letters. ,vol. 86, pp. 032908- ,(2005) , 10.1063/1.1854195
S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser, Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions Applied Physics Letters. ,vol. 77, pp. 1662- 1664 ,(2000) , 10.1063/1.1310209
SJ Wang, JW Chai, JS Pan, ACH Huan, None, Thermal stability and band alignments for Ge3N4 dielectrics on Ge Applied Physics Letters. ,vol. 89, pp. 022105- ,(2006) , 10.1063/1.2220531
E. A. Kraut, R. W. Grant, J. R. Waldrop, S. P. Kowalczyk, Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy Physical Review B. ,vol. 28, pp. 1965- 1977 ,(1983) , 10.1103/PHYSREVB.28.1965
V. V. Afanas’ev, A. Stesmans, Energy band alignment at the (100)Ge/HfO2 interface Applied Physics Letters. ,vol. 84, pp. 2319- 2321 ,(2004) , 10.1063/1.1688453
Y Feng Dong, YP Feng, SJ Wang, ACH Huan, None, First-principles study of Zr O 2 ∕ Si interfaces: Energetics and band offsets Physical Review B. ,vol. 72, pp. 045327- ,(2005) , 10.1103/PHYSREVB.72.045327
P. W. Peacock, J. Robertson, Band offsets and Schottky barrier heights of high dielectric constant oxides Journal of Applied Physics. ,vol. 92, pp. 4712- 4721 ,(2002) , 10.1063/1.1506388
Chi On Chui, S. Ramanathan, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric IEEE Electron Device Letters. ,vol. 23, pp. 473- 475 ,(2002) , 10.1109/LED.2002.801319
M. Meuris, A. Delabie, S. Van Elshocht, S. Kubicek, P. Verheyen, B. De Jaeger, J. Van Steenbergen, G. Winderickx, E. Van Moorhem, R.L. Puurunen, B. Brijs, M. Caymax, T. Conard, O. Richard, W. Vandervorst, C. Zhao, S. De Gendt, T. Schram, T. Chiarella, B. Onsia, I. Teerlinck, M. Houssa, P.W. Mertens, G. Raskin, P. Mijlemans, S. Biesemans, M.M. Heyns, The future of high-K on pure germanium and its importance for Ge CMOS Materials Science in Semiconductor Processing. ,vol. 8, pp. 203- 207 ,(2005) , 10.1016/J.MSSP.2004.09.124
J. Robertson, B. Falabretti, Band offsets of high K gate oxides on III-V semiconductors Journal of Applied Physics. ,vol. 100, pp. 014111- ,(2006) , 10.1063/1.2213170