Thermal stability and band alignments for Ge3N4 dielectrics on Ge
作者： SJ Wang , JW Chai , JS Pan , ACH Huan , None
DOI: 10.1063/1.2220531
关键词:
摘要: Ge3N4 dielectrics were prepared on Ge surface by in situ direct atomic source nitridation. The thermal stability and band alignments for Ge3N4∕Ge interfaces have been studied using high-resolution x-ray photoemission spectroscopy. treatment shows that film has higher temperature up to 550°C vacuum. conduction- valence-band offsets at interface are quite asymmetrical with the values of 2.22 1.11eV, respectively.
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