Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
作者： Chi On Chui , S. Ramanathan , B.B. Triplett , P.C. McIntyre , K.C. Saraswat
关键词:
摘要: For the first time, we have successfully demonstrated the feasibility of integrating a high-permittivity (/spl kappa/) gate dielectric material zirconium oxide into the MOS capacitors …
harvard.edu
researchgate.net 
sci-hub.se 参考文章(15)
Minjoo L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, T. Langdo, M. T. Currie, G. Taraschi, E. A. Fitzgerald, Dimitri A. Antoniadis, Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates Applied Physics Letters. ,vol. 79, pp. 3344- 3346 ,(2001) , 10.1063/1.1417515
Andrew B. Young, James J. Rosenberg, Istvan Szendro, Preparation of Germanium Nitride Films by Low Pressure Chemical Vapor Deposition Journal of The Electrochemical Society. ,vol. 134, pp. 2867- 2870 ,(1987) , 10.1149/1.2100303
D. J. Hymes, James J. Rosenberg, Growth and Materials Characterization of Native Germanium Oxynitride Thin Films on Germanium Journal of The Electrochemical Society. ,vol. 135, pp. 961- 965 ,(1988) , 10.1149/1.2095851
G. D. Wilk, R. M. Wallace, J. M. Anthony, High-κ gate dielectrics: Current status and materials properties considerations Journal of Applied Physics. ,vol. 89, pp. 5243- 5275 ,(2001) , 10.1063/1.1361065
Valentin Craciun, Ian W. Boyd, Bernie Hutton, David Williams, Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation Applied Physics Letters. ,vol. 75, pp. 1261- 1263 ,(1999) , 10.1063/1.124661
Shigeki Iwauchi, Toshio Tanaka, Interface Properties of Al2O3-Ge Structure and Characteristics of Al2O3-Ge MOS Transistors Japanese Journal of Applied Physics. ,vol. 10, pp. 260- 265 ,(1971) , 10.1143/JJAP.10.260
Takehisa Yashiro, Determination of Trap Levels in Ge3N4and Barrier Energies at the Ge3N4-Ge Interface by C-V Characteristics Japanese Journal of Applied Physics. ,vol. 10, pp. 1691- 1697 ,(1971) , 10.1143/JJAP.10.1691
B.Gérard Segda, M Jacquet, C Caapera, G Baud, J Pierre Besse, Study and optimization of alumina and germanium dioxide and their multilayer capacitor properties Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 170, pp. 105- 114 ,(2000) , 10.1016/S0168-583X(00)00184-1
Charles M. Perkins, Baylor B. Triplett, Paul C. McIntyre, Krishna C. Saraswat, Suvi Haukka, Marko Tuominen, Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition Applied Physics Letters. ,vol. 78, pp. 2357- 2359 ,(2001) , 10.1063/1.1362331
O. J. Gregory, E. E. Crisman, Lisa Pruitt, D. J. Hymes, James J. Rosenberg, Electrical Characterization of Some Native Insulators on Germanium MRS Proceedings. ,vol. 76, ,(1986) , 10.1557/PROC-76-307