作者: O. J. Gregory , E. E. Crisman , Lisa Pruitt , D. J. Hymes , James J. Rosenberg
DOI: 10.1557/PROC-76-307
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摘要: Preliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical (wet oxidation) described. Compositional data based IR transmission and ellipsometry, as well characteristics MOS capacitors this film are given. Also, compositional electrical nitrided atmospheric pressure oxides reported here. These films have very low fixed charge interface state densities, show excellent potential use gate in technology.