Effect of Ge Surface Nitridation on the $hboxGe/HfO_2/hboxAl$ MOS Devices
作者： R. Garg , D. Misra , S. Guha
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摘要: In this paper, the effect of Ge surface nitridation on Ge/HfO2/Al MOS capacitors has been studied. Low-frequency measurements indicated presence significant interface states in nitrided devices. As temperature decreased from 300 to 140 K, electron trapping increased monotonically both and nonnitrided devices, but state density didn't show a major fluctuation devices as compared A constant voltage stress was applied samples test their behavior under stress. Electron dominant at lower voltages. After relaxation, detrapping observed recovered original state. Nitrided showed hole after stress, further device deterioration relaxation
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