Plasma anodic oxidation and nitridation of Ge(111) surface

摘要: Plasma anodic oxidation/nitridation of Ge(111) wafer was carried out in a plasma atmosphere oxygen or an ammonia/nitrogen mixture. The excited by high-frequency (0.5 MHz) electromagnetic field. chemical and physical properties the grown films were analysed using Auger electron spectroscopy, X-ray photoelectron infrared spectrophotometry C-V characterization. results show that refractive index (1.60 +or- 0.02), composition (O/Ge approximately= 2.1) absorption peaks (560 cm-1 870 anodized are very similar to those vitreous GeO2, film on germanium substrate has excellent insulating interface-state properties. It is also shown after nitridation processing film, solubility greatly diminished due formation oxynitride overlayer. For nitrided Ge, 2.10 0.02 at growth temperature 540-700 degrees C bulk N/Ge 1.26. There broad band (730-780 cm-1) weak peak (910 IR spectrum film. These associated with alpha -phase nitride beta