Band offsets of HfO2∕GeON∕Ge stacks measured by ultraviolet and soft x-ray photoelectron spectroscopies
作者： E. Martinez , O. Renault , L. Fourdrinier , L. Clavelier , C. Le Royer
DOI: 10.1063/1.2437096
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摘要: Electronic properties of the HfO2∕GeON∕Ge stacks were studied using ultraviolet and synchrotron radiation photoelectron spectroscopies. The valence band offset HfO2 with Ge is equal to 2.9±0.1eV. Intermediate electronic states observed in GeON gap related structural defects, oxygen vacancies, N 2p states. As a consequence, reduced by 2.4±0.1eV reach 1.2±0.1eV. This value lower than previous reported results GeOx interfacial layer, but still compatible semiconductor technology.
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